Design and Analysis of RF MEMS Switch with π- Shaped Cantilever Beam for Wireless Applications

被引：0

作者：

Raman, R. ^{[1
]}

Shanmuganantham, T. ^{[1
]}

机构：

[1] Pondicherry Univ, Dept Elect Engn, Pondicherry, India

来源：

IEEE INTERNATIONAL CONFERENCE ON EMERGING TECHNOLOGICAL TRENDS IN COMPUTING, COMMUNICATIONS AND ELECTRICAL ENGINEERING (ICETT) | 2016年

关键词：

RF MEMS; cantilever beam; beam gap actuation voltage; isolation; insertion loss; return loss;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper focuses on the design and analysis of RF MEMS metal contact switch with a pi shaped cantilever beam operating in the frequency range from 4 to 12 GHz. The topology of the design is a modified cantilever beam to achieve a low pullin voltage. The design was analyzed as a metal contact switch to ensure its operation from DC onwards. The design is modified in terms of thickness of the beam, beam gap and the material used to perform electrostatic actuation mechanism. The actuation voltage was achieved to be 10V with an insertion loss of -9.40 dB at 12 GHz. The return loss was -9.710 dB at 12 GHz in the ON state and -3.3 dB at 12 GHz in the off state. An isolation of about -90.80 dB at 12 GHz was achieved in the off state.

引用

页数：5

共 19 条

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