Correlated photon pairs from single (In,Ga)As/GaAs quantum dots in pillar microcavities

被引：30

作者：

Benyoucef, M

Ulrich, SM

Michler, P

Wiersig, J

Jahnke, F

Forchel, A

机构：

[1] Univ Stuttgart, Phys Inst 5, D-70550 Stuttgart, Germany

[2] Univ Bremen, Inst Theoret Phys, D-28334 Bremen, Germany

[3] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 02期

关键词：

D O I：

10.1063/1.1809251

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the triggered generation of photon pairs by the cascaded biexciton-exciton emission from a single (In,Ga)As/GaAs quantum dot (QD) in a pillar microcavity. Photon cross-correlation measurements between the biexciton and exciton decay reveal highly asymmetric features under continuous wave excitation and a bunching effect under pulsed excitation due to the cascaded nature of the process. An enhancement of the QD photoluminescence (PL) intensity by a factor of 40 was found for pillar microcavities (0.6 mum diameter) compared to the excitonic PL intensity in bulk semiconductors, thus reflecting the enhanced photon collection effect out of the cavity structure. The observed pillar mode structure is well understood on the basis of an extended transfer-matrix method. (C) 2005 American Institute of Physics.

引用

页数：4

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