Acid-base properties of passive films on aluminum I. A photoelectrochemical study

被引:15
作者
Lopez, S [1 ]
Petit, JP
Dunlop, HM
Butruille, JR
Tourillon, G
机构
[1] Inst Natl Polytech Grenoble, Lab Electrochim & Physicochim Mat & Interfaces, CNRS, UMR 5631, F-38402 St Martin Dheres, France
[2] Pechiney Ctr Rech Voreppe, F-38340 Voreppe, France
[3] CNRS, Cristallog Lab, F-38042 Grenoble, France
关键词
D O I
10.1149/1.1838351
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The acid-base properties of aluminum surfaces have recently attracted much interest due to their consequences on the adhesion of organic coatings. The present work deals with a novel photoelectrochemical approach to the acid-base properties of aluminum surfaces. Passive films were considered here as wide-gap semiconductors. When they are in contact with an electrolyte, a space charge builds up. A negative (positive) space charge is considered here as a sign of an electron donor (acceptor) surface, i.e., to a Lewis basic (acid) surface. The more negative (positive) the space charge or the corresponding band bending in the semiconductor, the more basic (acid) the passivated surface. The spectrophotoelectrochemical response of the samples polarized at the rest potential under ultraviolet illumination allowed the measurement of the band bending as the difference between the thresholds of two photoemission phenomena from the Fermi level toward the passive film conduction band at the inner and outer interfaces of the passive films. Negative band bendings were always obtained, evidencing the basic character of the analyzed surfaces. A basicity scale was obtained which is compared in Part II to that deduced from X-ray photoelectron and X-ray absorption near-edge structure studies.
引用
收藏
页码:823 / 829
页数:7
相关论文
共 57 条
[1]  
[Anonymous], 1987, ALCOA TECHNICAL PAPE
[2]  
[Anonymous], ACID BASE INTERACTIO
[3]  
[Anonymous], 1976, OXIDES OXIDE FILMS
[4]  
BAROUX B, 1996, EL SOC M ABSTR SAN A, V96, P319
[5]  
BUREAU C, 1993, VIDE COUCHES MINCES, V268, P15
[6]  
Burleigh TD, 1995, MATER SCI FORUM, V185-, P447, DOI 10.4028/www.scientific.net/MSF.185-188.447
[7]   PREDICTION OF FLATBAND POTENTIALS AT SEMICONDUCTOR-ELECTROLYTE INTERFACES FROM ATOMIC ELECTRONEGATIVITIES [J].
BUTLER, MA ;
GINLEY, DS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (02) :228-232
[8]   ACID-BASE BEHAVIOR OF ALUMINUM AND SILICON-OXIDES - A COMBINATION OF 2 APPROACHES - XPS AND LEWIS ACIDO-BASICITY - REST POTENTIAL AND BRONSTED ACIDO-BASICITY [J].
CASAMASSIMA, M ;
DARQUECERETTI, E ;
ETCHEBERRY, A ;
AUCOUTURIER, M .
APPLIED SURFACE SCIENCE, 1991, 52 (03) :205-213
[9]   XPS INVESTIGATIONS OF ACID-BASE INTERACTIONS IN ADHESION .4. USE OF TRICHLOROMETHANE AS A MOLECULAR PROBE FOR THE QUANTITATIVE ASSESSMENT OF POLYMER BASICITY [J].
CHEHIMI, MM ;
WATTS, JF ;
ELDRED, WK ;
FRAOUA, K ;
SIMON, M .
JOURNAL OF MATERIALS CHEMISTRY, 1994, 4 (02) :305-309
[10]   FIRST-PRINCIPLES CALCULATION OF ELECTRONIC, OPTICAL, AND STRUCTURAL-PROPERTIES OF ALPHA-AL2O3 [J].
CHING, WY ;
XU, YN .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1994, 77 (02) :404-411