Low-temperature ECR-PEMOCVD deposition of high-quality crystalline gallium nitride films: A comparative study of intermediate layers for growth on amorphous glass substrates

被引：7

作者：

Bian, Jiming ^{[1
,3
]}

Miao, Lihua ^{[1
]}

Qin, Fuwen ^{[1
,2
]}

Zhang, Dong ^{[1
,4
]}

Liu, Weifeng ^{[1
]}

Liu, Hongzhu ^{[1
]}

机构：

[1] Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Liaoning, Peoples R China

[2] Dalian Univ Technol, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Liaoning, Peoples R China

[3] Chinese Acad Sci, Key Lab Inorgan Coating Mat, Shanghai 200050, Peoples R China

[4] Shenyang Inst Engn, New Energy Source Res Ctr, Shenyang 110136, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2014年 / 26卷

关键词：

Gallium nitride (GaN); Glass substrate; Plasma-enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD); Intermediate layers; CHEMICAL-VAPOR-DEPOSITION; ORIENTED GAN FILMS; SAPPHIRE;

D O I：

10.1016/j.mssp.2014.04.030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low temperature growth method based on an electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) was proposed for the growth of GaN (Gallium nitride) films on ordinary amorphous soda-lime glass substrates. To alleviate the large lattice mismatch between GaN film and glass substrate and improve the heat dissipation performance for potential optoelctrical device application, five intermediate layers (Cu, Ni, Ti, Ag, and ITO) were deposited-on the glass substrate before the growth of GaN. A comparative study was performed through structural analysis of the as-grown GaN films with various intermediate layers investigated by means of in-situ reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), and atomic force microscopy (AFM). The results indicate that the Ti intermediate layer has a great advantage over other intermediate layers in view of crystalline quality and smooth surface, therefore is more suitable and preferred for the potential application in optoelectronic devices. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：182 / 186

页数：5

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