Spin-transfer induced ultrafast precessional switching of magnetization in a Co/Cu/Co nanopillar device is studied. Micromagnetic calculations show that precessional magnetization switching occurs above a threshold current. The presence of interface uniaxial anisotropy in the Co-thin film free layer influences heavily the current and the energy required to initiate the switching in the device, and the speed of the precessional switching. The threshold current and the precessional switching time are significantly reduced by this effect. (C) 2009 Elsevier B. V. All rights reserved.
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CEA Saclay, DRF IRAMIS SPEC, UMR CEA CNRS 3680, F-91191 Gif Sur Yvette, France
Univ Montpellier, Lab Charles Coulomb, UMR 5221, CNRS, F-34095 Montpellier, FranceCEA Saclay, DRF IRAMIS SPEC, UMR CEA CNRS 3680, F-91191 Gif Sur Yvette, France
Chirac, Theophile
Chauleau, Jean-Yves
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CEA Saclay, DRF IRAMIS SPEC, UMR CEA CNRS 3680, F-91191 Gif Sur Yvette, FranceCEA Saclay, DRF IRAMIS SPEC, UMR CEA CNRS 3680, F-91191 Gif Sur Yvette, France
Chauleau, Jean-Yves
Thibaudeau, Pascal
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CEA DAM, BP 19, F-37260 Le Ripault, Monts, FranceCEA Saclay, DRF IRAMIS SPEC, UMR CEA CNRS 3680, F-91191 Gif Sur Yvette, France
Thibaudeau, Pascal
Gomonay, Olena
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Johannes Gutenberg Univ Mainz, Inst Phys, D-55099 Mainz, GermanyCEA Saclay, DRF IRAMIS SPEC, UMR CEA CNRS 3680, F-91191 Gif Sur Yvette, France
Gomonay, Olena
Viret, Michel
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CEA Saclay, DRF IRAMIS SPEC, UMR CEA CNRS 3680, F-91191 Gif Sur Yvette, FranceCEA Saclay, DRF IRAMIS SPEC, UMR CEA CNRS 3680, F-91191 Gif Sur Yvette, France