Efficiency enhancement using a Zn1-xGex-O thin film as an n-type window layer in Cu2O-based heterojunction solar cells

被引：158

作者：

Minami, Tadatsugu ^{[1
]}

Nishi, Yuki ^{[1
]}

Miyata, Toshihiro ^{[1
]}

机构：

[1] Kanazawa Inst Technol, Optoelect Device Syst R&D Ctr, Nonoichi, Ishikawa 9218501, Japan

来源：

APPLIED PHYSICS EXPRESS | 2016年 / 9卷 / 05期

关键词：

OXIDE BUFFER LAYER; PHOTOVOLTAIC PROPERTIES;

D O I：

10.7567/APEX.9.052301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Efficiency enhancement was achieved in Cu2O-based heterojunction solar cells fabricated with a zinc-germanium-oxide (Zn1-xGex-O) thin film as the n-type window layer and a p-type Na-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing Cu sheets. The Ge content (x) dependence of the obtained photovoltaic properties of the heterojunction solar cells is mainly explained by the conduction band discontinuity that results from the electron affinity difference between Zn1-xGex-O and Cu2O: Na. The optimal value of x in Zn1-xGex-O thin films prepared by pulsed laser deposition was observed to be 0.62. An efficiency of 8.1% was obtained in a MgF2/Al-doped ZnO/Zn0.38Ge0.62-O/Cu2O:Na heterojunction solar cell. (C) 2016 The Japan Society of Applied Physics

引用

页数：4

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