Condensation of ground state from a supercooled phase in the Si(111)-(4 x 1)! (8 x 2)-indium atomic wire system

被引:4
|
作者
Hafke, B.
Witte, T.
Janoschka, D.
Dreher, P.
Heringdorf, F. -J. Meyer Zu
Horn-von Hoegen, M. [1 ]
机构
[1] Univ Duisburg Essen, Dept Phys, Lotharstr 1, D-47057 Duisburg, Germany
来源
STRUCTURAL DYNAMICS-US | 2019年 / 6卷 / 04期
关键词
TRANSITION; SURFACES; SILICON; CHAINS;
D O I
10.1063/1.5111636
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Strong optical irradiation of indium atomic wires on a Si(111) surface causes the nonthermal structural transition from the (8 2) reconstructed ground state to an excited (4 1) state. The immediate recovery of the system to the ground state is hindered by an energy barrier for the collective motion of the indium atoms along the reaction coordinate from the (4 1) to the (8 2) state. This metastable, supercooled state can only recover through nucleation of the ground state at defects like adsorbates or step edges. Subsequently, a recovery front propagates with constant velocity across the surface and the (8 2) ground state is reinstated. In a combined femtosecond electron diffraction and photoelectron emission microscopy study, we determined-based on the step morphology-a velocity of this recovery front of 100 m/s. (C) 2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http:// creativecommons.org/licenses/by/4.0/). https://doi.org/10.1063/1.5111636
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页数:5
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