Selective RIE in BCl3/SF6 plasmas for GaAsHEMT gate recess etching

被引：0

作者：

Lee, YS ^{[1
]}

Upadhyaya, K ^{[1
]}

Nordheden, KJ ^{[1
]}

机构：

[1] Univ Kansas, Dept Chem & Petr Engn, Plasma Res Lab, Lawrence, KS 66045 USA

来源：

COMPOUND SEMICONDUCTOR POWER TRANSISTORS II AND STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXII) | 2000年 / 2000卷 / 01期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A selective reactive ion etch process for GaAs HEMTs has been developed using BCl3/SF6 gas mixtures. The influence of gas flow ratio, pressure, and rf power on the selectivity was examined. An optimum selective etching process using a Plasma Therm 790 reactive ion etching system was determined to be 50 W rf power, gas flow ratio of BCl(I)3/SF(6)s=2.5 seem/7.5 seem, and chamber pressure of 50 mTorr.

引用

页码：182 / 188

页数：7

共 8 条

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