Tunable electronic properties of multilayer phosphorene and its nanoribbons

被引:17
作者
Soleimanikahnoj, S. [1 ]
Knezevic, I. [1 ]
机构
[1] Univ Wisconsin, Dept Elect & Comp Engn, 1415 Johnson Dr, Madison, WI 53706 USA
关键词
Phosphorene; Edge states; NEGF; BERRYS PHASE; FIELD; CONDUCTANCE; SEMIMETAL; GAP;
D O I
10.1007/s10825-017-1036-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We study the effects of a vertical electric field on the electronic band structure and transport in multilayer phosphorene and its nanoribbons. In phosphorene, at a critical value of the vertical electric field (E-c), the band gap closes and the band structure undergoes a massive-to-massless Dirac fermion transition along the armchair direction. This transition is observable in quantum Hall measurements, as the power-law dependence of the Landau-level energy on the magnetic field B goes from similar to(n + 1/2) B below E-c, to similar to[(n + 1/2) B](2/3) at E-c, to similar to[(n + 1/2) B](1/2) above E-c. In multilayer phosphorene nanoribbons (PNRs), the vertical electric field can be employed to manipulate the midgap energy bands that are associated with edge states, thereby giving rise to new device functionalities. We propose a dual-edge-gate PNR structure that works as a quantum switch.
引用
收藏
页码:568 / 575
页数:8
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