Near UV emission and p-type conductivity in Zn1-xLixO and Zn1-xNaxO nanomaterial system

被引：19
作者：
Chawla, Santa [1 ]
Jayanthi, K. [1 ]
Khan, Zahid H. [2 ]
Shah, Jyoti [1 ]
Kotnala, R. K. [1 ]
机构：
[1] Natl Phys Lab, New Delhi 110012, India
[2] Jamia Millia Islamia, Dept Phys, New Delhi 110025, India
来源：
MATERIALS & DESIGN | 2010年 / 31卷 / 04期
关键词：
OPTICAL-PROPERTIES; THIN-FILMS; ZNO; ACCEPTOR; LITHIUM;
D O I：
10.1016/j.matdes.2009.05.048
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The nanomaterial system Zn1-xLixO and Zn1-xNaxO (0 <= x <= 0.15) were synthesized by controlled solid Received 15 September 2008 state reaction. XRD analysis showed well formed wurtzite structure of average particle size about Accepted 30 May 2009 50 nm and change in lattice parameters due to incorporation of group I element in ZnO lattice. SEM Available online 12 August 2009 exhibited formation of nanorods. Hall effect measurement of Zn1-xLixO and Zn1-xNaxO system showed p-type conductivity which varied with concentration of Li and Na. Photoluminescence showed strong emission peak in near UV at 3.11 eV (398 nm) and negligible visible emission. The PL peak positions in Zn1-xLixO and Zn1-xNaxO nearly coincide which suggest very similar recombination mechanism in Li and Na doped ZnO nanocrystals. The results hold potential for fabrication of ZnO based near UV LEDs. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1666 / 1670
页数：5
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