Constitutive modeling of intrinsic silicon monocrystals in easy glide

被引：23

作者：

Cochard, J. ^{[1
]}

Yonenaga, I. ^{[2
]}

Gouttebroze, S. ^{[3
]}

M'Hamdi, M. ^{[3
]}

Zhang, Z. L. ^{[1
]}

机构：

[1] Norwegian Univ Sci & Technol NTNU, Dept Struct Engn, NO-7491 Trondheim, Norway

[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[3] SINTEF Mat & Chem, NO-0315 Oslo, Norway

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 03期

关键词：

elemental semiconductors; finite element analysis; plastic deformation; plasticity; silicon; slip; tensile strength; tensile testing; YIELD-POINT; DISLOCATION DYNAMICS; PLASTIC-DEFORMATION; SINGLE-CRYSTALS; MULTIPLICATION; EVOLUTION; MOBILITY; BEHAVIOR; KINETICS; DENSITY;

D O I：

10.1063/1.3284082

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Constitutive modeling of silicon materials is currently restricted to the very early stage of deformation. Uniaxial tensile testing of monocrystals oriented for single glide is traditionally simulated by a scalar model relying on the so-called machine equation. The present work uses a crystal plasticity framework to identify the role of secondary slip systems in the yield region. A three-dimensional finite element model of a tensile apparatus is validated by comparison of its outputs to the results yielded by a scalar formulation. Best fits of the constitutive model of Alexander and Haasen to experimental data reveal strong variations in its parameters with temperature. An improved constitutive model for intrinsic silicon monocrystals deformed in single slip is described. Its parameters are identified as analytical functions of temperature. We show its excellent agreement with the observed steady state of deformation in stage I.

引用

页数：9

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