Band-edge exciton states in AlN single crystals and epitaxial layers

被引：68
作者：
Chen, L
Skromme, BJ [1 ]
Dalmau, RF
Schlesser, R
Sitar, Z
Chen, C
Sun, W
Yang, J
Khan, MA
Nakarmi, ML
Lin, JY
Jiang, HX
机构：
[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA
[3] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
[4] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
[5] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 19期
关键词：
D O I：
10.1063/1.1818733
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The band-edge excitonic properties of AlN are investigated using low-temperature (1.7 K) optical reflectance and transmission measurements of samples with various crystal orientations. The A, B, and C excitons are found to have energies of 6.025, 6.243, and 6.257 eV in unstrained material, which shift with strain. The results are compared to a calculation of exciton energies and oscillator strengths to yield a crystal-field splitting of -230 meV in unstrained AlN, in good agreement with previous ab initio calculations. (C) 2004 American Institute of Physics.
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页码：4334 / 4336
页数：3
相关论文
共 22 条
  • [1] Critical point transitions of wurtzite AlN in the vacuum-ultraviolet spectral range
    Chen, J
    Shen, WZ
    Ogawa, H
    Guo, QX
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (24) : 4866 - 4868
  • [2] Properties of bulk AlN grown by thermodecomposition of AlCl3•NH3
    Freitas, JA
    Braga, GCB
    Silveira, E
    Tischler, JG
    Fatemi, M
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (13) : 2584 - 2586
  • [3] Temperature effect on the electronic structure of AlN
    Guo, QX
    Nishio, M
    Ogawa, H
    Yoshida, A
    [J]. PHYSICAL REVIEW B, 2001, 64 (11):
  • [4] Effective masses and valence-band splittings in GaN and AlN
    Kim, K
    Lambrecht, WRL
    Segall, B
    vanSchilfgaarde, M
    [J]. PHYSICAL REVIEW B, 1997, 56 (12) : 7363 - 7375
  • [5] Near-band-edge photoluminescence of wurtzite-type AlN
    Kuokstis, E
    Zhang, J
    Fareed, Q
    Yang, JW
    Simin, G
    Khan, MA
    Gaska, R
    Shur, M
    Rojo, C
    Schowalter, L
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (15) : 2755 - 2757
  • [6] Band structure and fundamental optical transitions in wurtzite AlN
    Li, J
    Nam, KB
    Nakarmi, ML
    Lin, JY
    Jiang, HX
    Carrier, P
    Wei, SH
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (25) : 5163 - 5165
  • [7] Majewski JA, 1996, MRS INTERNET J N S R, V1, pU247
  • [8] Exciton spectra of an AlN epitaxial film on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy
    Onuma, T
    Chichibu, SF
    Sota, T
    Asai, K
    Sumiya, S
    Shibata, T
    Tanaka, M
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (04) : 652 - 654
  • [9] Electronic structure calculations on nitride semiconductors
    Pugh, SK
    Dugdale, DJ
    Brand, S
    Abram, RA
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (01) : 23 - 31
  • [10] Seeded growth of AlN bulk single crystals by sublimation
    Schlesser, R
    Dalmau, R
    Sitar, Z
    [J]. JOURNAL OF CRYSTAL GROWTH, 2002, 241 (04) : 416 - 420
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