Combination of JFET and MOSFET devices in 4H-SiC for high-temperature stable circuit operation

被引：2

作者：

Koo, SM ^{[1
]}

Zetterling, CM ^{[1
]}

Lee, HS ^{[1
]}

Östling, M ^{[1
]}

机构：

[1] KTH, Royal Inst Technol, Dept Microelect & Informat Technol, S-16440 Stockholm, Sweden

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 12期

关键词：

D O I：

10.1049/el:20030606

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel combination of junction-gated and metal-oxide-semiconductor field effect transistor (JMOSFET) has been fabricated and characterised in 4H-SiC. The high-temperature stable operation of JMOSFETs has been explored in terms of constant current levels. The JMOSFETs have shown the feasibility for operating with constant on and off current levels from room temperature up to 300degreesC. Another advantage of this device is the improved current density by accumulation of the MOS n-channel.

引用

页码：933 / 935

页数：3

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