Nanosheet controlled epitaxial growth of PbZr0.52Ti0.48O3 thin films on glass substrates

被引:20
|
作者
Bayraktar, M. [1 ]
Chopra, A. [2 ]
Bijkerk, F. [3 ]
Rijnders, G. [2 ]
机构
[1] Univ Twente, MESA Inst Nanotechnol, Laser Phys & Nonlinear Opt Grp, NL-7500 AE Enschede, Netherlands
[2] Univ Twente, MESA Inst Nanotechnol, Inorgan Mat Sci Grp, NL-7500 AE Enschede, Netherlands
[3] Univ Twente, MESA Inst Nanotechnol, Ind Focus Grp XUV Opt, NL-7500 AE Enschede, Netherlands
关键词
LEAD-ZIRCONATE-TITANATE; PULSED-LASER DEPOSITION; CRYSTAL ORIENTATION DEPENDENCE; PIEZOELECTRIC PROPERTIES; PZT FILMS; STABILIZED ZIRCONIA; PEROVSKITE; LAYER; CRYSTALLIZATION; ELECTRODES;
D O I
10.1063/1.4896991
中图分类号
O59 [应用物理学];
学科分类号
摘要
Integration of PbZr0.52Ti0.48O3 (PZT) films on glass substrates is of high importance for device applications. However, to make use of the superior ferro-and piezoelectric properties of PZT, well-oriented crystalline or epitaxial growth with control of the crystal orientation is a prerequisite. In this article, we report on epitaxial growth of PZT films with (100)- and (110)-orientation achieved by utilizing Ca2Nb3O10 (CNO) and Ti0.87O2 (TO) nanosheets as crystalline buffer layers. Fatigue measurements demonstrated stable ferroelectric properties of these films up to 5 x 10(9) cycles. (100)-oriented PZT films on CNO nanosheets show a large remnant polarization of 21 mu C/cm(2) that is the highest remnant polarization value compared to (110)-oriented and polycrystalline films reported in this work. A piezoelectric response of 98 pm/V is observed for (100)-oriented PZT film which is higher than the values reported in the literature on Si substrates. (C) 2014 AIP Publishing LLC.
引用
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页数:4
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