Characterization of Si-doped layer in GaAs fabricated by a focused ion beam molecular beam epitaxy combined system

被引：4

作者：

Yanagisawa, J ^{[1
]}

Nakayama, H

Oka, K

Nakai, M

Wakaya, F

Yuba, Y

Takaoka, S

Murase, K

Gamo, K

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Dept Phys Sci, Toyonaka, Osaka 560, Japan

[2] Osaka Univ, Grad Sch Sci, Dept Phys, Toyonaka, Osaka 560, Japan

[3] Osaka Univ, Res Ctr Mat Sci Extreme Condit, Toyonaka, Osaka 560, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1997年 / 15卷 / 06期

关键词：

D O I：

10.1116/1.589757

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Effect of the regrowth temperature of the cap layer grown successively on a Si focused ion beam (FIB) implanted GaAs surface on the dopant activation was investigated using a FIB/molecular beam epitaxy combined system. Indication of the reevaporation of the implanted Si was observed at high regrowth temperature and the fabrication process was improved by using low regrowth temperature. A high doping efficiency was obtained for the ion dose at about 1 x 10(13) cm(-2). Present results indicate the importance of controlling the regrowth condition to obtain high doping efficiency. (C) 1997 American Vacuum Society.

引用

页码：2930 / 2933

页数：4

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