Bismuth pyrochlore films for dielectric applications

Bismuth pyrochlore ceramics have modest temperature coefficients of capacitance, good microwave properties, and can be prepared at relatively modest temperatures (similar to 900 - 1100 degrees C). This work focuses on the preparation and characterization of thin films in this family for the first rime. A sol-gel procedure using bismuth acetate in acetic acid and pyridine, in combination with zinc acetate dihydrate and niobium ethoxide in 2-methoxyethanol was developed. The solution chemistry was adjusted to prepare (Bi1.5Zn0.5)(Zn0.5Nb1.5)O-7 and Bi-2(Zn1/3Nb2/3)(2)O-7 films. Solutions were spin-coated onto platinized Si substrates and crystallized by rapid thermal annealing. In both cases, crystallization occurred by 550 degrees C into the cubic pyrochlore structure. (Bi1.5Zn0.5)(Zn0.5Nb1.5)O-7 films remained in the cubic phase up to crystallization temperatures of 750 degrees C, while the structure of the Bi-2(Zn1/3Nb2/3)(2)O-7 thin films is dependent of the firing temperature: cubic below 650 degrees C and orthorhombic above 750 degrees C. A mixture of cubic and orthorhombic structures is found at 700 degrees C. The resulting BZN films are dense, uniform, and smooth (rms roughness of < 5 nm). Cubic bismuth zinc niobate films show dielectric constants up to 150, a negative temperature coefficient of capacitance, TCC, (similar to - 400 ppm/degrees C), tan delta < 0.01, and a field tunable dielectric constant. Orthorhombic films showed smaller dielectric constants (similar to 80), low tan delta (< 0.01), positive TCC, and field independent dielectric constants. TCC could be adjusted to new 0 ppm/degrees C using a mixture of orthorhombic and cubic material.