Ta2O5 polymorphs: Structural motifs and dielectric constant from first principles

被引:39
作者
Andreoni, Wanda [1 ]
Pignedoli, Carlo A. [1 ,2 ]
机构
[1] IBM Res Zurich, CH-8803 Ruschlikon, Switzerland
[2] Empa, Swiss Fed Labs Mat Testing & Res, CH-8600 Dubendorf, Switzerland
关键词
ab initio calculations; crystal growth; density functional theory; permittivity; polymorphism; Raman spectra; tantalum compounds; GENERALIZED GRADIENT APPROXIMATION; THIN-FILMS;
D O I
10.1063/1.3308475
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using large-scale simulations based on density-functional theory we determine the structural properties of several polymorphs of tantalia, their vibrational spectra and dielectric properties. Our calculations indicate that structurally distinct configurations can coexist, having coordination polyhedra that are dissimilar or have different relative arrangements. Interpolyhedra vibrations are discovered to be responsible for sizable changes of the static dielectric constant from one polymorph to the other. Our results for the dielectric constant (both at high and low frequency) are in excellent agreement with experiment and provide an explanation for the different measured values and their claimed dependence on growth conditions.
引用
收藏
页数:3
相关论文
共 35 条
[1]   Rietveld analysis of X-ray diffraction pattern from β-Ta2O5 oxide [J].
Aleshina, LA ;
Loginova, SV .
CRYSTALLOGRAPHY REPORTS, 2002, 47 (03) :415-419
[2]   Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs [J].
Atanassova, E. ;
Paskaleva, A. .
MICROELECTRONICS RELIABILITY, 2007, 47 (06) :913-923
[3]   Phonons and related crystal properties from density-functional perturbation theory [J].
Baroni, S ;
de Gironcoli, S ;
Dal Corso, A ;
Giannozzi, P .
REVIEWS OF MODERN PHYSICS, 2001, 73 (02) :515-562
[4]   Ta2O5 as gate dielectric material for low-voltage organic thin-film transistors [J].
Bartic, C ;
Jansen, H ;
Campitelli, A ;
Borghs, S .
ORGANIC ELECTRONICS, 2002, 3 (02) :65-72
[5]   The importance of network structure in high-k dielectrics:: LaAlO3, Pr2O3, and Ta2O5 -: art. no. 044102 [J].
Busani, T ;
Devine, RAB .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (04)
[6]   ENHANCEMENT OF THE DIELECTRIC-CONSTANT OF TA2O5 THROUGH SUBSTITUTION WITH TIO2 [J].
CAVA, RF ;
PECK, WF ;
KRAJEWSKI, JJ .
NATURE, 1995, 377 (6546) :215-217
[7]   Dielectric properties of Ta2O5-ZrO2 polycrystalline ceramics [J].
Cava, RJ ;
Krajewski, JJ .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (03) :1613-1616
[8]   Dielectric materials for applications in microwave communications [J].
Cava, RJ .
JOURNAL OF MATERIALS CHEMISTRY, 2001, 11 (01) :54-62
[9]   Dielectric properties of Ta2O5-SiO2 polycrystalline ceramics [J].
Cava, RJ ;
Krajewski, JJ ;
Peck, WF ;
Roberts, GL .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (04) :2346-2348
[10]   Properties of amorphous and crystalline Ta2O5 thin films deposited on Si from a Ta(OC2H5)5 precursor [J].
Chaneliere, C ;
Four, S ;
Autran, JL ;
Devine, RAB ;
Sandler, NP .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (09) :4823-4829