A potential red phosphor LiGd(MoO4)2:Eu3+ for light-emitting diode application

被引：61
作者：
Yi, Linghong [1 ]
He, Xipu [1 ]
Zhou, Liya [1 ]
Gong, Fuzhong [1 ]
Wang, Rongfang [1 ]
Sun, Jianhua [1 ]
机构：
[1] Guangxi Univ, Sch Chem & Chem Engn, Nanning 530004, Peoples R China
来源：
JOURNAL OF LUMINESCENCE | 2010年 / 130卷 / 06期
关键词：
Optical materials; Phosphor; Luminescence; LUMINESCENCE; NANOCRYSTALS; EMISSION; CHIP;
D O I：
10.1016/j.jlumin.2010.02.006
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Eu3+-doped LiGd(MoO4)(2) red phosphor was synthesized by solid-state reaction, and its photoluminescent properties were measured. The effect of Eu3+ doping concentration on PL intensity was investigated, and the optimum concentration of Eu3+ doped in LiGd(MoO4)(2) was found to be 30 mol%. Compared with Y2O2S:0.05Eu(3+), Na0.5Gd0.5MoO4:Eu3+ and KGd(MoO4)(2):Eu3+, the LiGd(MoO4)(2):Eu3+ phosphor showed a stronger excitation band around 395 nm and a higher intensity red emission of Eu3+ under 395 nm light excitation. For the first time, intensive red light-emitting diodes (LEDs) were fabricated by combining phosphor and a 395 nm InGaN chip, confirming that the LiGd(MoO4)(2):Eu3+ phosphor is a good candidate for LED applications. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：1113 / 1117
页数：5
相关论文
共 22 条
  • [1] White-light emission from magic-sized cadmium selenide nanocrystals
    Bowers, MJ
    McBride, JR
    Rosenthal, SJ
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (44) : 15378 - 15379
  • [2] Structural, spectroscopic and photolurninescence studies of LiEu(WO4)2-x(MoO4), as a near-UV convertible phosphor
    Chiu, Chuang-Hung
    Wang, Ming-Fang
    Lee, Chi-Shen
    Chen, Teng-Ming
    [J]. JOURNAL OF SOLID STATE CHEMISTRY, 2007, 180 (02) : 619 - 627
  • [3] Huh YD, 2004, B KOREAN CHEM SOC, V25, P1585
  • [4] Luminescence properties of Eu2+-activated alkaline-earth silicon-oxynitride MSi2O2-δN2+2/3δ (M = Ca, Sr, Ba):: A promising class of novel LED conversion phosphors
    Li, YQ
    Delsing, ACA
    de With, G
    Hintzen, HT
    [J]. CHEMISTRY OF MATERIALS, 2005, 17 (12) : 3242 - 3248
  • [5] Multicolor light-emitting diodes based on semiconductor nanocrystals encapsulated in GaN charge injection layers
    Mueller, AH
    Petruska, MA
    Achermann, M
    Werder, DJ
    Akhadov, EA
    Koleske, DD
    Hoffbauer, MA
    Klimov, VI
    [J]. NANO LETTERS, 2005, 5 (06) : 1039 - 1044
  • [6] High-power phosphor-converted light-emitting diodes based on III-nitrides
    Mueller-Mach, R
    Mueller, GO
    Krames, MR
    Trottier, T
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (02) : 339 - 345
  • [7] Extracting phosphor-scattered photons to improve white LED efficiency
    Narendran, N
    Gu, Y
    Freyssinier-Nova, JP
    Zhu, Y
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (06): : R60 - R62
  • [8] Phosphor-conversion white light emitting diode using InGaN near-ultraviolet chip
    Narukawa, Y
    Niki, I
    Izuno, K
    Yamada, M
    Murazaki, Y
    Mukai, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (4A): : L371 - L373
  • [9] Novel red phosphors for solid-state lighting:: the system NaM(WO4)2-x(MoO4)x:Eu3+ (M=Gd, Y, Bi)
    Neeraj, S
    Kijima, N
    Cheetham, AK
    [J]. CHEMICAL PHYSICS LETTERS, 2004, 387 (1-3) : 2 - 6
  • [10] Application of strontium silicate yellow phosphor for white light-emitting diodes
    Park, JK
    Kim, CH
    Park, SH
    Park, HD
    Choi, SY
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (10) : 1647 - 1649
123