Microstructural characterization of InxGa1-xN MBE samples

被引：12

作者：

Katsikini, M

Paloura, EC ^{[1
]}

Boscherini, F

D'Acapito, F

Lioutas, CB

Doppalapudi, D

机构：

[1] Aristotle Univ Thessaloniki, Dept Phys, GR-54124 Thessaloniki, Greece

[2] Univ Bologna, Ist Nazl Fis Mat, I-40127 Bologna, Italy

[3] Univ Bologna, Dipartimento Fis, I-40127 Bologna, Italy

[4] OGG, Ist Nazl Fis Mat, GILDA CRG, ESRF, F-38043 Grenoble, France

[5] Boston Univ, Dept Elect & Comp Engn, Photon Ctr, Boston, MA 02215 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2003年 / 200卷

关键词：

X-ray absorption; EXAFS; microstructure; ternary alloys; semiconductors;

D O I：

10.1016/S0168-583X(02)01706-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The microstructure of InxGa1-xN samples grown by electron cyclotron resonance plasma assisted molecular beam epitaxy is studied, as a function of the In concentration, using extended X-ray absorption fine structure spectroscopy (EXAFS), TEM and X-ray diffraction (XRD). The electron and XRD patterns were used in order to determine the correct composition of the samples. Phase separation phenomena are observed in the XRD pattern of the sample with the highest In content. The EXAFS analysis reveals that for In concentrations up to 20%, the cation-N distances do not vary with the sample composition. Contrary to that, the cation-cation distances depend on the In concentration and more specifically RGa-Ca < RGa-In RIn-In. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：114 / 119

页数：6

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