Franz-Keldysh oscillations at the miniband edge in a GaAs/AlxGa1-xAs superlattice

被引:5
|
作者
Ando, M [1 ]
Nakayama, M
Nishimura, H
Schneider, H
Fujiwara, K
机构
[1] Osaka City Univ, Fac Engn, Dept Appl Phys, Sumiyoshi Ku, Osaka 558, Japan
[2] Fraunhofer Inst Angew Festkorperphys, D-79108 Freiberg, Germany
[3] Kyushu Inst Technol, Dept Elect Engn, Tobata Ku, Fukuoka 804, Japan
关键词
superlattice; GaAs/AlxGa1-xAs; miniband; Franz-Keldysh oscillation; Wannier-Stark localization; electroreflectance;
D O I
10.1006/spmi.1996.0333
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have systematically measured the electroreflectance spectra of a GaAs (7.0 nm)/Al0.1Ga0.9As (3.5 nm) superlattice at various electric fields to investigate Franz-Keldysh (FK) oscillations. In the low-field regime, we clearly observe the FK oscillations toward the low-energy side of the M-1 critical point (mini-Brillouin-zone edge). As the electric field is increased, the direction of the FK oscillations is reversed, then the oscillations disappear. The change of the oscillation direction correlates with the transformation of the electronic structures from the miniband to the Stark-ladder states in the Wannier-Stark localization. We discuss these experimental results on the basis of a theory of the FK oscillations and envelope-function forms calculated by a transfer matrix method with Airy functions. (C) 1997 Academic Press Limited.
引用
收藏
页码:459 / 465
页数:7
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