Current-voltage characteristics of GaN and AlGaN p-i-n diodes

被引：6

作者：

Kuznetsov, NI ^{[1
]}

Irvine, KG

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Cree Res Inc, Durham, NC 27713 USA

来源：

SEMICONDUCTORS | 1998年 / 32卷 / 03期

关键词：

D O I：

10.1134/1.1187392

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The current-voltage characteristics of GaN and Al0.08Ga0.92N p-i-n diodes were investigated. The experimental p-i-n structures were grown by MOCVD on 6H-SiC with Si and Mg as dopants. The i region was formed by simultaneously doping with donor and acceptor impurities during growth. Analysis of the current-voltage characteristics showed that current flow in the p-i-n diodes is due to either drift of thermally excited holes or electron-hole recombination in the i region via impurity centers-just as predicted by the Ashley-Milnes theory. These impurity centers are attributed to Mg acceptor levels. (C) 1998 American Institute of Physics.

引用

页码：335 / 338

页数：4

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