Dark and photocurrent response of porous Si/GO-PANI and Si/rGO-PANI heterojunctions for photovoltaics applications

被引:11
作者
Rai, Sadhna [1 ]
Bhujel, Rabina [1 ]
Biswas, Joydeep [2 ]
Deka, Utpal [3 ]
Swain, Bibhu P. [4 ]
机构
[1] Sikkim Manipal Univ, Ctr Mat Sci & Nanotechnol, Sikkim Manipal Inst Technol, Majhitar 737136, East Sikkim, India
[2] Sikkim Manipal Univ, Sikkim Manipal Inst Technol, Dept Chem, Majhitar 737136, East Sikkim, India
[3] Sikkim Manipal Univ, Sikkim Manipal Inst Technol, Dept Phys, Majhitar, East Sikkim, India
[4] Natl Inst Technol, Dept Phys, Langol 795004, Manipur, India
关键词
Porous silicon; PANI/rGO heterojunction; Photovoltaics; Light trapping; I-V characteristics;
D O I
10.1016/j.matpr.2020.07.373
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Porous silicon (pSi) surface enhances light trapping in which improves the silicon solar cell performance. Metal assisted chemical etching (MaCE) technique was used to synthesize pSi. The pSi heterojunction with graphene oxide (GO), reduced graphene oxide (rGO), GO-polyaniline(PANI) and rGO-PANI was fabricated and characterized with Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD) and scanning electron microscopy (SEM) to investigate chemical bonding, structural and morphological properties respectively. The FTIR signature at around 1300, 1500, and 1600 cm(-1) confirmed the signature of C-C stretching vibrations, C = C stretching of the benzenoid ring, and C = N stretching for the quinoid ring in pSi/rGO-PANI heterojunction. The dark and photocurrent of current-voltage (IV) characteristics showed the Schottky behavior was highest for Si/rGO-PANI. Moreover, pSi/rGO-PANI heterojunction showed the highest photosensitivity and photoresponsivity values of 58.92 and 1.25 mAW(-1) respectively. (C) 2019 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1848 / 1851
页数:4
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