Electrical breakdown in MIS and MS systems

被引：0
|
作者：
Horváth, ZJ [1 ]
机构：
[1] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary
来源：
PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II | 2000年 / 3975卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The classification, mechanisms, definitions, measurements techniques and application of electrical breakdown occurring in semiconductors and dielectric lavers are briefly overviewed. Some features of the electrical breakdown are demonstrated dth experimental results obtained in different metal-insulator-semiconductor and metal-semiconductor systems.
引用
收藏
页码：760 / 767
页数：8
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