Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy

被引：14

作者：

Bouzazi, Boussairi ^{[1
]}

Suzuki, Hidetoshi ^{[1
]}

Kojima, Nobuaki ^{[1
]}

Ohshita, Yoshio ^{[1
]}

Yamaguchi, Masafumi ^{[1
]}

机构：

[1] Toyota Technol Inst, Tempa Ku, Nagoya, Aichi 4688511, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 05期

关键词：

LEVEL TRANSIENT SPECTROSCOPY; QUANTUM-WELLS; THIN-FILMS; GAINNAS; SEMICONDUCTORS; TRAPS;

D O I：

10.1143/JJAP.49.051001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A nitrogen-related deep electron trap, at approximately 0.33 eV below the conduction band minimum of GaAsN grown by chemical beam epitaxy, is confirmed to act as a recombination center. The level is found to be responsible for the reverse bias current in the depletion region of n-type GaAsN schottky junction and N(+)-GaAs/p-GaAsN heterojunction, where the current is due mainly to electrons. This result is obtained by correlating the thermal activation energy of the reverse bias current and the activation energy of electron traps, investigated in the two structures by deep level transient spectroscopy. (C) 2010 The Japan Society of Applied Physics

引用

页码：0510011 / 0510014

页数：4

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