Atomic layer deposition of platinum thin films

被引：339

作者：

Aaltonen, T

Ritala, M

Sajavaara, T

Keinonen, J

Leskelä, M

机构：

[1] Univ Helsinki, Dept Chem, Inorgan Chem Lab, FIN-00014 Helsinki, Finland

[2] Univ Helsinki, Dept Sci, FIN-00014 Helsinki, Finland

来源：

CHEMISTRY OF MATERIALS | 2003年 / 15卷 / 09期

关键词：

D O I：

10.1021/cm021333t

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Platinum thin films were grown at 300 T by atomic layer deposition (ALD) using (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3) and oxygen as precursors. The films had excellent uniformity, low resistivity, and low-impurity contents. Structural studies by X-ray diffraction showed that the films were strongly (111) oriented. Growth rates of 0.45 Angstrom cycle(-1) were obtained with 4 s total cycle times. The film thickness was found to linearly depend on the number of the reaction cycles. Also, the possible reaction mechanism is discussed.

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页码：1924 / 1928

页数：5

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