A comparison of MBE- and MOCVD-grown GaInNAs

被引：86

作者：

Ptak, AJ ^{[1
]}

Johnston, SW ^{[1
]}

Kurtz, S ^{[1
]}

Friedman, DJ ^{[1
]}

Metzger, WK ^{[1
]}

机构：

[1] Nat Ctr Photovoltaics, Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期

关键词：

impurities; point defects; metalorganic chemical vapor deposition; molecular beam epitaxy; nitrides;

D O I：

10.1016/S0022-0248(02)02201-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have been able to discount three point defects as the factor limiting GaInNAs material quality by comparing samples grown by two different growth techniques. Samples with vastly different concentrations of hydrogen and carbon have very similar properties in terms of deep levels, mobilities, and minority-carrier lifetimes. In addition, growth of hydrogen-free samples and corresponding measurements of vacancies provide strong evidence that gallium vacancies have an effect, but are not a limiting defect. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：392 / 398

页数：7

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