Surface characterization of ion-implanted polyethylene

被引:0
|
作者
Tretinnikov, ON
Ikada, Y
机构
[1] Kyoto Univ, Biomed Engn Res Ctr, Sakyo Ku, Kyoto 606, Japan
[2] Byelarussian Acad Sci, BI Stepanov Phys Inst, Minsk 220072, BELARUS
关键词
polyethylene; ion implantation; surface structure; wear; and hardness;
D O I
10.1002/(SICI)1099-0488(199803)36:4<715::AID-POLB17>3.0.CO;2-I
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Polyethylene (PE) film was implanted with 1000-keV Ari ions to a fluence of 5 x 10(14) ions/cm(2) under high vacuum conditions (2.5 x 10(-6) torr) and the film surface was investigated by means of microhardness and microwear measurements, and FTIR/ATR, Raman, and XPS techniques. Ion implantation significantly increased the subsurface hardness and also significantly improved the microwear resistance of the polymer. The implanted surface region of the film was found to consist of two distinct layers. One was the outermost carbon layer with a thickness of the order of 10 nm. In this layer, ca. 75% of carbon atoms were combined by graphitic sp(2) and diamond-like sp(3) bonds, and the remaining 25% had chemical links with oxygen atoms. Spectroscopic data suggested that the sp(2)-bonded carbons segregated in graphite-like clusters containing imbedded oxygen atoms, interconnected by the sp(3)-bonded carbons. The other was the subsurface layer resulting from PE oxidation after ion-beam treatment. This layer was characterized by high contents of O-H and C=O groups as well as ester and double bonds. The chemical composition of the layer was uniform and did not vary over the layer thickness of about 1.4 mu m. (C) 1998 John Wiley & Sons, Inc.
引用
收藏
页码:715 / 725
页数:11
相关论文
共 50 条
  • [1] HYDROGEN PROFILE IN ION-IMPLANTED POLYETHYLENE
    CALCAGNO, L
    FOTI, G
    APPLIED PHYSICS LETTERS, 1985, 47 (04) : 363 - 365
  • [2] Characterization of the Surface of Silver Ion-Implanted Silicon by Optical Reflectance
    A. L. Stepanov
    V. V. Vorobev
    V. I. Nuzhdin
    V. F. Valeev
    Yu. N. Osin
    Journal of Applied Spectroscopy, 2017, 84 : 785 - 789
  • [3] Characterization of the Surface of Silver Ion-Implanted Silicon by Optical Reflectance
    Stepanov, A. L.
    Vorobev, V. V.
    Nuzhdin, V. I.
    Valeev, V. F.
    Osin, Yu N.
    JOURNAL OF APPLIED SPECTROSCOPY, 2017, 84 (05) : 785 - 789
  • [4] STRUCTURAL CHARACTERIZATION OF ION-IMPLANTED GRAPHITE
    ELMAN, BS
    SHAYEGAN, M
    DRESSELHAUS, MS
    MAZUREK, H
    DRESSELHAUS, G
    PHYSICAL REVIEW B, 1982, 25 (06) : 4142 - 4156
  • [5] SURFACE HARDENING IN ION-IMPLANTED METALS
    HALL, BO
    JOURNAL OF NUCLEAR MATERIALS, 1983, 116 (01) : 123 - 126
  • [6] Surface recombination in ion-implanted MOSFETs
    Mah, MY
    Mohammad, SN
    Carter, RL
    SOLID-STATE ELECTRONICS, 2001, 45 (12) : 2039 - 2043
  • [7] Spectroscopic characterization of ion-implanted GaN
    Chen, L
    Skromme, BJ
    GAN AND RELATED ALLOYS-2002, 2003, 743 : 755 - 760
  • [8] CHARACTERIZATION OF ION-IMPLANTED IMPATT OSCILLATORS
    YING, RS
    MANKARIO.RG
    ENGLISH, DL
    BOWER, RW
    COERVER, LE
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1968, SC 3 (03) : 225 - &
  • [9] SURFACE STRESSES IN ION-IMPLANTED STEEL
    HARTLEY, NEW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 485 - 489
  • [10] CHARACTERIZATION OF THE MICROHARDNESS OF ION-IMPLANTED GAP
    ASCHERON, C
    NEUMANN, H
    KUHN, G
    CRYSTAL RESEARCH AND TECHNOLOGY, 1991, 26 (03) : 273 - 281