Homoepitaxial growth and characterization of phosphorus-doped diamond using tertiarybutylphosphine as a doping source'

Phosphorus-doped diamond was grown by plasma-enhanced chemical vapor deposition (CVD) using tertiarybutylphosphine (TBP) as doping gas. It was confirmed that phosphorus was successfully doped into homoepitaxial diamond films. The films exhibited a negative Hall coefficient throughout the temperature range, from room temperature to similar to673 K, indicating n-type conductivity. The best sample showed a mobility of similar to250 cm(2)/V s at room temperature and the activation energy of the carrier conduction was similar to0.6 eV. From observations of the bound-exciton emission in cathodoluminescence measurements, it was also shown that phosphorus atoms are located in substitutional sites of the diamond lattice as donor atoms. (C) 2004 Elsevier B.V All rights reserved.