Effect of sintering temperature on microstructures and microwave dielectric properties of Ba2MgWO6 ceramics

被引：15

作者：

Chen, Yih-Chien ^{[1
]}

Wang, Yen-Nien ^{[2
]}

Syu, Ruei-Yang ^{[1
]}

机构：

[1] Lunghua Univ Sci & Technol, Dept Elect Engn, Taoyuan, Taiwan

[2] Lunghwa Univ Sci & Technol, Dept Elect Engn, Taoyuan, Taiwan

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2016年 / 27卷 / 05期

关键词：

SR; BA;

D O I：

10.1007/s10854-016-4291-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The microwave dielectric properties of Ba2MgWO6 ceramics were investigated with a view to the use of such ceramics in mobile communication. Ba2MgWO6 ceramics were prepared using the conventional solid-state method with various sintering temperatures. Dielectric constants (E > (r) ) of 16.8-18.2 and unloaded quality factor (Q (u) x f) of 7000-118,200 GHz were obtained at sintering temperatures in the range 1450-1650 A degrees C for 2 h. A maximum apparent density of 6.76 g/cm(3) was obtained for Ba2MgWO6 ceramic, sintered at 1650 A degrees C for 2 h. A dielectric constant (E > (r) ) of 18.4, an unloaded quality factor (Q (u) x f) of 118,200 GHz, and a temperature coefficient of resonant frequency (tau (f) ) of -34 ppm/A degrees C were obtained when Ba2MgWO6 ceramics were sintered at 1650 A degrees C for 2 h.

引用

页码：4259 / 4264

页数：6

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