A single etch-step fabrication-tolerant polarization splitter

被引：49
|
作者：
Augustin, Luc M.
van der Tol, Jos J. G. M.
Hanfoug, Rabah
de Laat, Wim J. M.
van de Moosdijk, Michael J. E.
van Dijk, Paul W. L.
Oei, Yok-Siang
Smit, Meint K.
机构：
[1] Eindhoven Univ Technol, Commun Technol Basic Res & Applicat Res Inst, NL-5600 MB Eindhoven, Netherlands
[2] MAPPER Lithog, NL-2628 XK Delft, Netherlands
[3] ASML NV, NL-5504 DR Veldhoven, Netherlands
来源：
JOURNAL OF LIGHTWAVE TECHNOLOGY | 2007年 / 25卷 / 03期
关键词：
indium phosphide; integrated devices; polarization splitter;
D O I：
10.1109/JLT.2006.890430
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A tolerant single etch-step passive polarization splitter on InP/InGaAsP is designed and fabricated. The device consists of a directional coupler with a wide and a narrow waveguide. Modal birefringence of the third-order modes for transverse electric (TE) and transverse magnetic (TM) polarizations is employed to selectively couple one polarization. Tapering is applied to increase the tolerances. The devices are characterized, and the measurement results show good agreement with the beam-propagation-method simulations: a splitting ratio larger than 95% for a width range of around 100 nm and over a large wavelength range, covering at least the C-band.
引用
收藏
页码：740 / 746
页数：7
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