Electron-beam induced surface relief shape inversion in amorphous Ge4As4Se92 thin films

被引：4

作者：

Bilanych, V. ^{[1
]}

Komanicky, V. ^{[2
]}

Feher, A. ^{[2
]}

Kuzma, V. ^{[1
]}

Rizak, V. ^{[1
]}

机构：

[1] Uzhgorod Natl Univ, Dept Phys, UA-88000 Uzhgorod, Ukraine

[2] Safarik Univ, Fac Sci, Kosice 04154, Slovakia

来源：

THIN SOLID FILMS | 2014年 / 571卷

关键词：

Electron beam lithography; Chalcogenide glass; Thin films; Information recording; GLASSES; PHASE; TRANSITIONS; STATES;

D O I：

10.1016/j.tsf.2014.10.067

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of electron beam interaction with Ge4As4Se92 amorphous film surface have been studied. The dependence of the surface relief shape on the irradiation dose has been analyzed. We find a threshold irradiation dose at which the surface relief shape inversion occurs, i.e. expansion at low irradiation doses and contraction at high doses. Possible mechanisms behind observed phenomena have been discussed. The application of these materials in a direct structure fabrication by electron lithography and single-stage information recording has been demonstrated. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：175 / 179

页数：5

共 36 条

[1]

[Anonymous], 1993, Amorphous Inorganic Materials and Glasses

[2] TOPOLOGICAL THRESHOLD IN GEXAS40-XSE60 GLASSES AND THIN-FILMS [J].

ARSOVA, D ;

SKORDEVA, E ;

VATEVA, E .

SOLID STATE COMMUNICATIONS, 1994, 90 (05) :299-302

[3] Charging and discharging of electron beam resist films [J].

Bai, M ;

Pease, RFW ;

Tanasa, C ;

McCord, MA ;

Pickard, DS ;

Meisburger, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06) :2893-2896

[4] Internal friction in glassy semiconductors of the Ge-As-Se system [J].

Bilanich, V. S. ;

Onishchak, V. B. ;

Makauz, I. I. ;

Rizak, V. M. .

PHYSICS OF THE SOLID STATE, 2010, 52 (09) :1820-1829

[5] Investigation of thermal properties of the Ge-As-Se glasses by differential scanning calorimetry with heat flow harmonic modulation [J].

Bilanych, V. S. ;

Onyshchak, V. B. ;

Rizak, I. M. ;

Csach, K. ;

Flachbart, K. ;

Rizak, V. M. .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2013, 366 :48-53

[6] Photoinduced volume change in arsenic chalcogenides by band-gap light [J].

Chen, Gang ;

Jain, Himanshu ;

Vlcek, Miroslav ;

Ganjoo, Ashtosh .

PHYSICAL REVIEW B, 2006, 74 (17)

[7]

Damian P., 2013, J APPL PHYS, V113

[8] Mechanism of electron beam poled SHG in 0.95GeS2 • 0.05In2S3 chalcogenide glasses [J].

Dong, Guoping ;

Tao, Haizheng ;

Xiao, Xiudi ;

Lin, Changgui ;

Zhao, Xiujian ;

Mao, Shun .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2007, 68 (02) :158-161

[9] DEFECT STATES IN GROUP-V AMORPHOUS-SEMICONDUCTORS [J].

ELLIOTT, SR ;

DAVIS, EA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (13) :2577-2587

[10] RAPID REVERSIBLE LIGHT-INDUCED CRYSTALLIZATION OF AMORPHOUS SEMICONDUCTORS [J].

FEINLEIB, J ;

DENEUFVILLE, J ;

MOSS, SC ;

OVSHINSKY, SR .

APPLIED PHYSICS LETTERS, 1971, 18 (06) :254-+

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