Dislocation-induced ultra-low lattice thermal conductivity in rare earth doped β-Zn4Sb3

被引：20

作者：

Karthikeyan, Vaithinathan ^{[1
,2
]}

Arava, Clement Manohar ^{[1
,2
]}

Hlaing, May Zin ^{[1
,2
]}

Chen, Baojie ^{[1
,3
]}

Chan, Chi Hou ^{[1
,3
]}

Lam, Kwok-Ho ^{[4
]}

Roy, Vellaisamy A. L. ^{[1
,2
]}

机构：

[1] City Univ Hong Kong, State Key Lab Terahertz & Millimeter Waves, Kowloon Tong, Hong Kong, Peoples R China

[2] City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon Tong, Hong Kong, Peoples R China

[3] City Univ Hong Kong, Dept Elect Engn, Kowloon Tong, Hong Kong, Peoples R China

[4] Hong Kong Polytech Univ, Dept Elect Engn, Hung Hom, Hong Kong, Peoples R China

来源：

SCRIPTA MATERIALIA | 2020年 / 174卷 / 174期

关键词：

Thermal conductivity; Impurity-doping; Defect engineering; Thermoelectrics; Lattice dislocations; Anharmonicity; HIGH THERMOELECTRIC PERFORMANCE; SCATTERING; VACANCY; SEMICONDUCTOR; DEFECTS; SURFACE; DRIVEN; FIGURE; MERIT;

D O I：

10.1016/j.scriptamat.2019.08.037

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Defect engineering in thermoelectric materials leads to the formation of exotic transport properties. Specifically, reduction in lattice thermal conductivity (kappa(L)) can be realized through scattering of low and high-frequency phonons by interfacial and point defects respectively. Herein we explore such phenomena by inducing dense dislocations through doping of rare earth (RE) impurities in beta-(Zn1-xREx)(4)Sb-3[x = 03-0.5 at.%] as phonon scattering source of all frequencies. Lattice anharmonicity created results in an ultra-low kappa(L) of similar to 0.15 W/mK for beta-(Zn0.997Yb0.003)(4)Sb-3. Vibrational properties and phonon scattering altered by the lattice anharmonicity are studied in detail through terahertz and infrared spectroscopies. (C) 2019 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：95 / 101

页数：7

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