Proposal and fabrication of resonant-tunneling-diode terahertz oscillator with structure for high frequency modulation

被引：0
|
作者：
Minoguchi, K. [1 ]
Okada, K. [1 ]
Suzuki, S. [1 ]
Asada, M. [1 ]
机构：
[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Meguro Ku, Tokyo 1528552, Japan
来源：
2013 38TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2013年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Although the direct-modulation frequency in a resonant-tunneling-diode oscillator increases by reducing the metal-insulator-metal capacitance, the output power degrades simultaneously. We figured out this mechanism using an equivalent circuit model. Based on this result, a novel structure was proposed and fabricated, and terahertz oscillation without degradation in output power was obtained.
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页数：2
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