Electronic structure and optic absorption of phosphorene under strain

被引:38
作者
Duan, Houjian [1 ]
Yang, Mou [1 ]
Wang, Ruiqiang [1 ]
机构
[1] South China Normal Univ, Sch Phys & Telecommun Engn, Guangdong Prov Key Lab Quantum Engn & Quantum Mat, Guangzhou 510006, Guangdong, Peoples R China
关键词
Phosphorene; Strain; Band structure; Optic absorption; BLACK PHOSPHORUS;
D O I
10.1016/j.physe.2016.03.011
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We studied the electronic structure and optic absorption of phosphorene (monolayer of black phosphorus) under strain. Strain was found to be a powerful tool for the band structure engineering. The in plane strain in armchair or zigzag direction changes the effective mass components along both directions, while the vertical strain only has significant effect on the effective mass in the armchair direction. The band gap is narrowed by compressive in-plane strain and tensile vertical strain. Under certain strain configurations, the gap is closed and the energy band evolves to the semi-Dirac type: the dispersion is linear in the armchair direction and is gapless quadratic in the zigzag direction. The band-edge optic absorption is completely polarized along the armchair direction, and the polarization rate is reduced when the photon energy increases. Strain not only changes the absorption edge (the smallest photon energy for electron transition), but also the absorption polarization. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:177 / 181
页数:5
相关论文
共 50 条
  • [31] Direct observation of the layer-dependent electronic structure in phosphorene
    Li, Likai
    Kim, Jonghwan
    Jin, Chenhao
    Ye, Guo Jun
    Qiu, Diana Y.
    da Jornada, Felipe H.
    Shi, Zhiwen
    Chen, Long
    Zhang, Zuocheng
    Yang, Fangyuan
    Watanabe, Kenji
    Taniguchi, Takashi
    Ren, Wencai
    Louie, Steven G.
    Chen, Xian Hui
    Zhang, Yuanbo
    Wang, Feng
    NATURE NANOTECHNOLOGY, 2017, 12 (01) : 21 - 25
  • [32] Strain-induced recovery of electronic anisotropy in 90°-twisted bilayer phosphorene
    Xie, Jiafeng
    Luo, Qiangjun
    Jia, Lei
    Zhang, Z. Y.
    Shi, H. G.
    Yang, D. Z.
    Si, M. S.
    EPL, 2018, 121 (02)
  • [33] Strain-tunable photogalvanic effect in phosphorene
    Wu, J. H.
    Zhai, F.
    Lu, J. Q.
    Wu, J.
    Feng, X.
    MATERIALS TODAY COMMUNICATIONS, 2020, 24
  • [34] Magneto-electronic perturbation effects on the electronic phase of phosphorene
    Hien, Nguyen D.
    Phuong, Le T. T.
    Nguyen, Chuong, V
    Phuc, Huynh, V
    Hieu, Nguyen N.
    Kazzaz, Houshang Araghi
    Hoi, Bui D.
    MATERIALS RESEARCH EXPRESS, 2019, 6 (02)
  • [35] The Effect of Compressive and Tensile Strains on the Electron Structure of Phosphorene
    Krivosheeva, A., V
    Shaposhnikov, V. L.
    Stich, I
    PHYSICS OF THE SOLID STATE, 2021, 63 (11) : 1690 - 1694
  • [36] The effect of strain on the zigzag and armchair phosphorene nanoribbon
    Baghsiyahi, Fatemeh Badieian
    Yeganeh, Mahbubeh
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2020, 121
  • [37] First-principles study of the defected phosphorene under tensile strain
    Hao, Feng
    Chen, Xi
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (16)
  • [38] The deformation and failure behaviour of phosphorene nanoribbons under uniaxial tensile strain
    Sorkin, V.
    Zhang, Y. W.
    2D MATERIALS, 2015, 2 (03):
  • [39] Energetics and electronic structure of graphene nanoribbons under uniaxial torsional strain
    Yoneyama, Kazufumi
    Yamanaka, Ayaka
    Okada, Susumu
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (SD)
  • [40] Semiconductor to metal transition in bilayer phosphorene under normal compressive strain
    Manjanath, Aaditya
    Samanta, Atanu
    Pandey, Tribhuwan
    Singh, Abhishek K.
    NANOTECHNOLOGY, 2015, 26 (07)