Operation of ohmic Ti/Al/Pt/Au multilayer contacts to GaN at 600 °C in air

被引：15
作者：
Hou, Minmin [1 ]
Senesky, Debbie G. [1 ,2 ]
机构：
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Aeronaut & Astronaut, Stanford, CA 94305 USA
来源：
APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 08期
关键词：
METAL CONTACTS; RESISTANCE; ENVIRONMENT;
D O I：
10.1063/1.4894290
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The high-temperature characteristics (at 600 degrees C) of Ti/Al/Pt/Au multilayer contacts to gallium nitride (GaN) in air are reported. Microfabricated circular-transfer-line-method test structures were subject to 10 h of thermal storage at 600 degrees C. Intermittent electrical characterization during thermal storage showed minimal variation in the contact resistance after 2 h and that the specific contact resistivity remained on the order of 10(-5) Omega-cm(2). In addition, the thermally stored multilayer contacts to GaN showed ohmic I-V characteristics when electrically probed at 600 degrees C. The microstructural analysis with atomic force microscopy showed minimal changes in surface roughness after thermal storage. Observations of the thermochemical reactions after thermal storage using Auger electron spectroscopy chemical depth profiling showed diffusion of Pt and minimal additional Al oxidation. The results support the use of Ti/Al/Pt/Au multilayer metallization for GaN-based sensors and electronic devices that will operate within a high-temperature and oxidizing ambient. (C) 2014 AIP Publishing LLC.
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页数：4
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