Operation of ohmic Ti/Al/Pt/Au multilayer contacts to GaN at 600 °C in air

被引：15

作者：

Hou, Minmin ^{[1
]}

Senesky, Debbie G. ^{[1
,2
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Aeronaut & Astronaut, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 08期

关键词：

METAL CONTACTS; RESISTANCE; ENVIRONMENT;

D O I：

10.1063/1.4894290

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The high-temperature characteristics (at 600 degrees C) of Ti/Al/Pt/Au multilayer contacts to gallium nitride (GaN) in air are reported. Microfabricated circular-transfer-line-method test structures were subject to 10 h of thermal storage at 600 degrees C. Intermittent electrical characterization during thermal storage showed minimal variation in the contact resistance after 2 h and that the specific contact resistivity remained on the order of 10(-5) Omega-cm(2). In addition, the thermally stored multilayer contacts to GaN showed ohmic I-V characteristics when electrically probed at 600 degrees C. The microstructural analysis with atomic force microscopy showed minimal changes in surface roughness after thermal storage. Observations of the thermochemical reactions after thermal storage using Auger electron spectroscopy chemical depth profiling showed diffusion of Pt and minimal additional Al oxidation. The results support the use of Ti/Al/Pt/Au multilayer metallization for GaN-based sensors and electronic devices that will operate within a high-temperature and oxidizing ambient. (C) 2014 AIP Publishing LLC.

引用

页数：4

共 23 条

[1] QUANTITATIVE AUGER-ELECTRON ANALYSIS OF TITANIUM NITRIDES [J].

DAWSON, PT ;

TZATZOV, KK .

SURFACE SCIENCE, 1985, 149 (01) :105-118

[2] Very low resistance multilayer ohmic contact to n-GaN [J].

Fan, ZF ;

Mohammad, SN ;

Kim, W ;

Aktas, O ;

Botchkarev, AE ;

Morkoc, H .

APPLIED PHYSICS LETTERS, 1996, 68 (12) :1672-1674

[3] METAL CONTACTS TO GALLIUM NITRIDE [J].

FORESI, JS ;

MOUSTAKAS, TD .

APPLIED PHYSICS LETTERS, 1993, 62 (22) :2859-2861

[4]

George T, 2005, IEEE SENSOR, P1253

[5] The changing automotive environment: High-temperature electronics [J].

Johnson, RW ;

Evans, JL ;

Jacobsen, P ;

Thompson, JRR ;

Christopher, M .

IEEE TRANSACTIONS ON ELECTRONICS PACKAGING MANUFACTURING, 2004, 27 (03) :164-176

[6] Merits and Limitations of Circular TLM structures for contact resistance determination for novel III-VHBTs [J].

Klootwijk, JH ;

Timmering, CE .

ICMTS 2004: PROCEEDINGS OF THE 2004 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 2004, :247-252

[7] Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n-GaN [J].

Kumar, V ;

Zhou, L ;

Selvanathan, D ;

Adesida, I .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (03) :1712-1714

[8] Long-term thermal stability of Ti/Al/Pt/Au Ohmic contacts to n-type GaN [J].

Lee, CT ;

Kao, HW .

APPLIED PHYSICS LETTERS, 2000, 76 (17) :2364-2366

[9] On the specific contact resistance of metal contacts to p-type GaN [J].

Lewis, L. ;

Maaskant, P. P. ;

Corbett, B. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (12) :1738-1742

[10]

Liu F., 2012, SOLID STATE SENSORS, P214

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