Hexagonal SiGe quantum dots and nanorings on Si(110)

被引：10

作者：

Lee, C. -H. ^{[1
,2
]}

Liu, C. W. ^{[1
,2
,3
]}

Chang, H. -T. ^{[4
]}

Lee, S. W. ^{[4
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan

[3] Natl Nano Device Labs, Hsinchu 300, Taiwan

[4] Natl Cent Univ, Inst Mat Sci & Engn, Jhongli 320, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 05期

关键词：

CHEMICAL-VAPOR-DEPOSITION; GE ISLANDS; GROWTH; SI(001); LAYERS;

D O I：

10.1063/1.3309773

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The hexagonal shapes of Si0.13Ge0.87 quantum dots (QDs) and rings on Si(110) reflect the lattice symmetry of the top two Si layers on Si, which is different from that on Si(100). The formation time of nanorings on Si(110) is much longer than that on Si(100). This is probably due to the slow diffusion of Ge and Si on Si(110) substrate. Based on both transmission electron microscopy and Raman spectroscopy, the formation of SiGe nanorings can be attributed to Ge outdiffusion from the top of the central SiGe QDs during in situ annealing. Moreover, the Si cap layer is essential for nanorings formation. The uncapped QDs cannot transform into rings even after a long time annealing. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3309773]

引用

页数：3

共 16 条

[1] Optical investigation of growth mode of Ge thin films on Si(110) substrates [J].

Arai, J ;

Ohga, A ;

Hattori, T ;

Usami, N ;

Shiraki, Y .

APPLIED PHYSICS LETTERS, 1997, 71 (06) :785-787

[2] Intermixing and shape changes during the formation of InAs self-assembled quantum dots [J].

García, JM ;

MedeirosRibeiro, G ;

Schmidt, K ;

Ngo, T ;

Feng, JL ;

Lorke, A ;

Kotthaus, J ;

Petroff, PM .

APPLIED PHYSICS LETTERS, 1997, 71 (14) :2014-2016

[3] In(Ga)As self-assembled quantum ring formation by molecular beam epitaxy [J].

Granados, D ;

García, JM .

APPLIED PHYSICS LETTERS, 2003, 82 (15) :2401-2403

[4] A quantum ring terahertz detector with resonant tunnel barriers [J].

Huang, G. ;

Guo, W. ;

Bhattacharya, P. ;

Ariyawansa, G. ;

Perera, A. G. U. .

APPLIED PHYSICS LETTERS, 2009, 94 (10)

[5] Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures [J].

Kamins, TI ;

Carr, EC ;

Williams, RS ;

Rosner, SJ .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (01) :211-219

[6] SiGe nanorings by ultrahigh vacuum chemical vapor deposition [J].

Lee, C. -H. ;

Shen, Y. -Y. ;

Liu, C. W. ;

Lee, S. W. ;

Lin, B. -H. ;

Hsu, C. -H. .

APPLIED PHYSICS LETTERS, 2009, 94 (14)

[7] Challenges in epitaxial growth of SiGe buffers on Si (111), (110), and (112) [J].

Lee, Minjoo L. ;

Antoniadis, Dimitri A. ;

Fitzgerald, Eugene A. .

THIN SOLID FILMS, 2006, 508 (1-2) :136-139

[8] Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si [J].

Lee, SW ;

Chen, LJ ;

Chen, PS ;

Tsai, MJ ;

Liu, CW ;

Chien, TY ;

Chia, CT .

APPLIED PHYSICS LETTERS, 2003, 83 (25) :5283-5285

[9] The intermixing and strain effects on electroluminescence of SiGe dots [J].

Liao, M. H. ;

Lee, C.-H. ;

Hung, T. A. ;

Liu, C. W. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (05)

[10] GROWTH AND BAND-GAP OF STRAINED (110) SI1-XGEX LAYERS ON SILICON SUBSTRATES BY CHEMICAL-VAPOR-DEPOSITION [J].

LIU, CW ;

STURM, JC ;

LACROIX, YRJ ;

THEWALT, MLW ;

PEROVIC, DD .

APPLIED PHYSICS LETTERS, 1994, 65 (01) :76-78

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