Hot electron noise temperature of compound semiconductors determined by Monte Carlo method

被引：0

作者：

Tacano, M ^{[1
]}

Tomizawa, K ^{[1
]}

Tanoue, H ^{[1
]}

机构：

[1] Iwaki Meisei Univ, Tokyo 191, Japan

来源：

NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE | 1997年

关键词：

D O I：

暂无

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

The noise temperature Tn of n-GaAs was systematically studied as a function of the electric field and the temperature by the single particle Monte Carlo method. The noise temperature was evaluated to increase rapidly above 1 kV/cm, to reach more than 30,000 K in a pure sample at the lattice temperature of 80 K, keep that temperature above that electric field. The hot electron noise temperature was cooled down by the impurity scattering, while Tn was larger for the higher impurity concentration at a low substrate temperature below 100 K. These characteristics are in quantitative agreement with those of the experiments.

引用

页码：449 / 452

页数：4