Oxidation of ZrB2-SiC

被引:0
|
作者
Opila, EJ [1 ]
Halbig, MC [1 ]
机构
[1] NASA, Glenn Res Ctr, Cleveland, OH 44135 USA
来源
25TH ANNUAL CONFERENCE ON COMPOSITES, ADVANCED CERAMICS, MATERIALS, AND STRUCTURES: A | 2001年 / 22卷 / 03期
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper the oxidation behavior of ZrB(2)-20 vol% SiC is examined. Samples were exposed in stagnant air in a zirconia furnace (Deltech, Inc.) at temperatures of 1327, 1627, and 1927degreesC for ten ten-minute cycles. Samples were removed from the furnace after one, five, and ten cycles. Oxidized material was characterized by mass change when possible, x-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS). Oxidation kinetics, oxide scale development, and matrix recession were monitored as a function of time and temperature. Oxidation and recession rates of ZrB(2) - 20 vol% SiC were adequately modeled by parabolic kinetics. Oxidation rates of this material are rapid, allowing only very short-term application in air or other high oxygen partial pressure environments.
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页码:221 / 228
页数:8
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