Ohmic I-V characteristics in semi-insulating semiconductor diodes

被引：14

作者：

Jones, BK ^{[1
]}

Santana, J ^{[1
]}

McPherson, M ^{[1
]}

机构：

[1] Univ Lancaster, Sch Phys & Chem, Lancaster LA1 4YB, England

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 105卷 / 09期

关键词：

semiconductor; impurities in semiconductors; recombination and trapping;

D O I：

10.1016/S0038-1098(97)10204-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The contact made between a semi-insulating semiconductor and a metal (Schottky diode) or a low resistance semiconductor (bipolar diode) often gives an Ohmic I-V characteristic. This can be explained by standard relaxation semiconductor theory without the need for any special assumptions and the electrical properties can be predicted. These include the measured material resistivity, the temperature coefficient, the departures from the Ohmic character and possible negative capacitance effects. There are technological implications for devices using semi-insulating materials, such as MESFETs. (C) 1998 Elsevier Science Ltd.

引用

页码：547 / 549

页数：3

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