Electrical detection of spin accumulation in a p-type GaAs quantum well -: art. no. 166601

被引：42
作者：
Mattana, R
George, JM
Jaffrès, H
Van Dau, FN
Fert, A
Lépine, B
Guivarc'h, A
Jézéquel, G
机构：
[1] Unite Mixte Phys CNRS THALES, F-91404 Orsay, France
[2] Univ Paris 11, F-91405 Orsay, France
[3] Univ Rennes 1, Equipe Phys Surfaces & Interfaces, Unite Mixte Rech CNRS Univ PALMS 6627, F-35042 Rennes, France
来源：
PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 16期
关键词：
D O I：
10.1103/PhysRevLett.166601
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report on experiments in which a spin-polarized current is injected from a GaMnAs ferromagnetic electrode into a GaAs layer through an AlAs barrier. The resulting spin polarization in GaAs is detected by measuring how the tunneling current, to a second GaMnAs ferromagnetic electrode, depends on the orientation of its magnetization. Our results can be accounted for by sequential tunneling with the nonrelaxed spin splitting of the chemical potential, that is, spin accumulation, in GaAs. We discuss the conditions on the hole spin relaxation time in GaAs that are required to obtain the large effects we observe.
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共 27 条
[21]   HOLE POLARIZATION AND SLOW HOLE-SPIN RELAXATION IN AN N-DOPED QUANTUM-WELL STRUCTURE [J].
ROUSSIGNOL, P ;
ROLLAND, P ;
FERREIRA, R ;
DELALANDE, C ;
BASTARD, G ;
VINATTIERI, A ;
MARTINEZPASTOR, J ;
CARRARESI, L ;
COLOCCI, M ;
PALMIER, JF ;
ETIENNE, B .
PHYSICAL REVIEW B, 1992, 46 (11) :7292-7295
[22]   Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor [J].
Schmidt, G ;
Ferrand, D ;
Molenkamp, LW ;
Filip, AT ;
van Wees, BJ .
PHYSICAL REVIEW B, 2000, 62 (08) :R4790-R4793
[23]   Large tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor tunnel junctions [J].
Tanaka, M ;
Higo, Y .
PHYSICAL REVIEW LETTERS, 2001, 87 (02) :1-026602
[24]   EQUIVALENCE BETWEEN RESONANT TUNNELING AND SEQUENTIAL TUNNELING IN DOUBLE-BARRIER DIODES [J].
WEIL, T ;
VINTER, B .
APPLIED PHYSICS LETTERS, 1987, 50 (18) :1281-1283
[25]   Spintronics:: A spin-based electronics vision for the future [J].
Wolf, SA ;
Awschalom, DD ;
Buhrman, RA ;
Daughton, JM ;
von Molnár, S ;
Roukes, ML ;
Chtchelkanova, AY ;
Treger, DM .
SCIENCE, 2001, 294 (5546) :1488-1495
[26]   Anisotropic electrical spin injection in ferromagnetic semiconductor heterostructures [J].
Young, DK ;
Johnston-Halperin, E ;
Awschalom, DD ;
Ohno, Y ;
Ohno, H .
APPLIED PHYSICS LETTERS, 2002, 80 (09) :1598-1600
[27]   Room-temperature spin injection from Fe into GaAs -: art. no. 016601 [J].
Zhu, HJ ;
Ramsteiner, M ;
Kostial, H ;
Wassermeier, M ;
Schönherr, HP ;
Ploog, KH .
PHYSICAL REVIEW LETTERS, 2001, 87 (01)
123