Donor-acceptor pair luminescence of phosphorus-aluminum and nitrogen-aluminum pairs in 4H SiC

被引:1
作者
Ivanov, I. G. [1 ]
Henry, A. [1 ]
Janzen, E. [1 ]
机构
[1] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden
来源
SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2 | 2006年 / 527-529卷
关键词
phosphorus donor; nitrogen donor; aluminum acceptor; donor-acceptor pair;
D O I
10.4028/www.scientific.net/MSF.527-529.601
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The procedure of fitting the spectra associated with donor-acceptor pair luminescence arising from nitrogen-aluminum and phosphorus-aluminum pairs in 4H SiC is described in detail. We show that the fitting can be used not only for accurate evaluation of the ionization energies of the different donors and acceptors involved, but also for unambiguous determination of their lattice sites.
引用
收藏
页码:601 / +
页数:2
相关论文
共 7 条
[1]   LUMINESCENCE OF DONAR-ACCEPTOR PAIRS IN CUBIC SIC [J].
CHOYKE, WJ ;
PATRICK, L .
PHYSICAL REVIEW B, 1970, 2 (12) :4959-&
[2]  
Hagen S. H., 1973, Journal of Luminescence, V8, P18, DOI 10.1016/0022-2313(73)90032-X
[3]   SITE EFFECT ON THE IMPURITY LEVELS IN H-4, 6H, AND 15R SIC [J].
IKEDA, M ;
MATSUNAMI, H ;
TANAKA, T .
PHYSICAL REVIEW B, 1980, 22 (06) :2842-2854
[4]   Effective-mass theory of shallow donors in 4H-SIC [J].
Ivanov, IG ;
Stelmach, A ;
Kleverman, M ;
Janzén, E .
SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 :511-514
[5]   Ionization energies of phosphorus and nitrogen donors and aluminum acceptors in 4H silicon carbide from the donor-acceptor pair emission -: art. no. 241201 [J].
Ivanov, IG ;
Henry, A ;
Janzén, E .
PHYSICAL REVIEW B, 2005, 71 (24)
[6]   Analysis of the sharp donor-acceptor pair luminescence in 4H-SiC doped with nitrogen and aluminum -: art. no. 165211 [J].
Ivanov, IG ;
Magnusson, B ;
Janzén, E .
PHYSICAL REVIEW B, 2003, 67 (16)
[7]   Photoconductivity of lightly-doped and semi-insulating 4H-SiC and the free exciton binding energy [J].
Ivanov, IG ;
Zhang, J ;
Storasta, L ;
Janzén, E .
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 :613-616