High performance 33.7 GHz surface acoustic wave nanotransducers based on AlScN/diamond/Si layered structures

被引:28
作者
Wang, Lei [1 ]
Chen, Shuming [1 ]
Zhang, Jinying [2 ]
Zhou, Jian [3 ]
Yang, Chengtao [4 ]
Chen, Yiqin [5 ]
Duan, Huigao [5 ]
机构
[1] Natl Univ Def Technol, Coll Comp, Changsha 410073, Hunan, Peoples R China
[2] Beijing Inst Technol, Sch Optoelect, Beijing 100081, Peoples R China
[3] Hunan Univ, Coll Mech & Vehicle Engn, Changsha 410082, Hunan, Peoples R China
[4] Univ Elect Sci & Technol, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
[5] Hunan Univ, State Key Lab Adv Design & Mfg Vehicle Body, Changsha 410082, Hunan, Peoples R China
基金
中国国家自然科学基金;
关键词
MODULATION; DIAMOND; FILM;
D O I
10.1063/1.5046113
中图分类号
O59 [应用物理学];
学科分类号
摘要
Surface acoustic wave (SAW) devices are essential devices for communication and sensing, but usually have an operation frequency limit well below 20 GHz due to the constraints of material properties and fabrication capability. By using an AlScN/diamond layered structure with a high electromechanical coupling coefficient K-2 and our proposed two-step exposure electron beam lithography (EBL) process for ultra-fine patterns, we have fabricated SAW devices with resonant frequency up to 33.7 GHz in the Ka-band, the highest one ever reported for SAW devices electrically excited by interdigital transducers (IDTs). Combined with finite element analysis, we identified that series resonances are fundamental and high order Rayleigh modes, and K-2 are in the range of 1.21%-2.32%, 200% higher compared to those of traditional AlN/diamond-based SAW devices. The high order modes become stronger and dominant, particularly suitable for the development of ultrahigh frequency SAW devices and applications. In addition, the proposed EBL process showed its superb capability to make ultra-fine IDTs down to the nano-scale with excellent smooth edges and uniform patterns, suitable for ultrahigh frequency SAW development. Published by AIP Publishing.
引用
收藏
页数:4
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