First investigation of the noise and modulation properties of the carrier-envelope offset in a modelocked semiconductor laser

被引:13
作者
Brochard, Pierre [1 ]
Jornod, Nayara [1 ]
Schilt, Stephane [1 ]
Wittwer, Valentin J. [1 ]
Hakobyan, Sargis [1 ]
Waldburger, Dominik [2 ]
Link, Sandro M. [2 ]
Alfieri, Cesare G. E. [2 ]
Golling, Matthias [2 ]
Devenoges, Laurent [3 ]
Morel, Jacques [3 ]
Keller, Ursula [2 ]
Sudmeyer, Thomas [1 ]
机构
[1] Univ Neuchatel, Inst Phys, Lab Temps Frequence, CH-2000 Neuchatel, Switzerland
[2] Swiss Fed Inst Technol, Inst Quantum Elect, Dept Phys, CH-8093 Zurich, Switzerland
[3] Fed Inst Metrol METAS, CH-3003 Bern, Switzerland
基金
欧盟第七框架计划;
关键词
SOLID-STATE LASER; OPTICAL FREQUENCY COMB; PHASE-CONTROL; DISK LASERS; FIBER-LASER; SESAM; STABILIZATION; DYNAMICS;
D O I
10.1364/OL.41.003165
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We present the first characterization of the noise properties and modulation response of the carrier-envelope offset (CEO) frequency in a semiconductor modelocked laser. The CEO beat of an optically-pumped vertical external-cavity surface-emitting laser (VECSEL) at 1030 nm was characterized without standard f-to-2f interferometry. Instead, we used an appropriate combination of signals obtained from the modelocked oscillator and an auxiliary continuous-wave laser to extract information about the CEO signal. The estimated linewidth of the free-running CEO beat is approximately 1.5 MHz at 1-s observation time, and the feedback bandwidth to enable a tight CEO phase lock to be achieved in a future stabilization loop is in the order of 300 kHz. We also characterized the amplitude and phase of the pump current to CEO-frequency transfer function, which showed a 3-dB bandwidth of similar to 300 kHz for the CEO frequency modulation. This fulfills the estimated required bandwidth and indicates that the first self-referenced phase-stabilization of a modelocked semiconductor laser should be feasible in the near future. (C) 2016 Optical Society of America
引用
收藏
页码:3165 / 3168
页数:4
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