Characterization methods for defects and devices in silicon carbide

被引：31

作者：

Bathen, M. E. ^{[1
]}

Lew, C. T. -K. ^{[2
]}

Woerle, J. ^{[1
]}

Dorfer, C. ^{[1
]}

Grossner, U. ^{[1
]}

Castelletto, S. ^{[3
]}

Johnson, B. C. ^{[4
]}

机构：

[1] Swiss Fed Inst Technol, Adv Power Semicond Lab, CH-8092 Zurich, Switzerland

[2] Univ Melbourne, Sch Phys, Melbourne, Vic 3010, Australia

[3] RMIT Univ, Sch Engn, Melbourne, Vic 3001, Australia

[4] RMIT Univ, Ctr Quantum Computat & Commun Technol, Sch Engn, Melbourne, Vic 3001, Australia

来源：

JOURNAL OF APPLIED PHYSICS | 2022年 / 131卷 / 14期

基金：

澳大利亚研究理事会;

关键词：

CHARGE-PUMPING MEASUREMENTS; COHERENT CONTROL; 1ST-PRINCIPLES CALCULATIONS; INTERFACE TRAPS; MATERIAL PLATFORMS; POINT-DEFECTS; COLOR-CENTERS; SPIN QUBITS; VACANCY; TEMPERATURE;

D O I：

10.1063/5.0077299

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Significant progress has been achieved with silicon carbide (SiC) high power electronics and quantum technologies, both drawing upon the unique properties of this material. In this Perspective, we briefly review some of the main defect characterization techniques that have enabled breakthroughs in these fields. We consider how key data have been collected, interpreted, and used to enhance the application of SiC. Although these fields largely rely on separate techniques, they have similar aims for the material quality and we identify ways in which the electronics and quantum technology fields can further interact for mutual benefit.

引用

页数：22

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