Ultrafast Optical Response of InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors

被引：2

作者：

Taguchi, Hirohisa ^{[1
]}

Oishi, Yasuyuki ^{[1
]}

Ando, Takahisa ^{[1
]}

Uchimura, Kazuya ^{[1
]}

Mochiduki, Miho ^{[1
]}

Enomoto, Mitsuhiro ^{[1
]}

Iida, Tsutomu ^{[1
]}

Takanashi, Yoshifumi ^{[1
]}

机构：

[1] Tokyo Univ Sci, Fac Ind Sci & Technol, Dept Mat Sci & Technol, Chiba 2788510, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期

关键词：

HOLE ACCUMULATION; DEPENDENCE; FREQUENCY; HEMTS; MODEL;

D O I：

10.1143/JJAP.49.04DF03

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-electron-mobility transistors with a pseudomorphically strained InAs channel (InAs-PHEMTs) have excellent electron transport properties and a high electron density, which are due to their large conduction band discontinuity. In this work, we show the dependence of optical response on drain-to-source voltage (V-DS) for InAs-PHEMTs and clarify the physical mechanism for the response time. The experimental results can be explained successfully using two different lifetimes, one dominated by the time required for a hole to transit from the channel to the source region under the channel field and the other dominated by Auger recombination. To numerically understand the optical response, we estimate minority carrier lifetime using the Auger recombination theory. The theoretical result agrees well with the experimental result. (C) 2010 The Japan Society of Applied Physics

引用

页数：4

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