Measurements of the band alignment at coherent α-Ga2O3/Al2O3 heterojunctions

被引：12
|
作者：
Oshima, Takayoshi [1 ]
Kato, Yuji [1 ]
Kobayashi, Eiichi [2 ]
Takahashi, Kazutoshi [3 ]
机构：
[1] Saga Univ, Dept Elect & Elect Engn, Saga 8408502, Japan
[2] Kyushu Synchrotron Light Res Ctr, Tosu, Saga 8410005, Japan
[3] Saga Univ, Synchrotron Light Applicat Ctr, Saga 8408502, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2018年 / 57卷 / 08期
关键词：
FILMS; ALPHA-AL2O3; DEPOSITION; SAPPHIRE;
D O I：
10.7567/JJAP.57.080308
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The band alignment at a coherent alpha-Ga2O3/Al2O3 heterointerface was evaluated by analyzing X-ray photoemission spectra for an alpha-Al2O3 film and an alpha-Ga2O3/Al2O3 multi-quantum wells grown coherently on sapphire substrates. The measured bandgaps of alpha-Ga2O3 and alpha-Al2O3 were 5.7 and 8.7 eV, and the conduction- and valence-band offsets were 2.7 and 0.3 eV, respectively. The smaller valence-band offset is attributed the large contribution of localized O 2p orbitals at the top of the valance band in the oxides. These results complete our understanding of the band alignment of the alpha-(AlxGa1-x)(2)O-3 system in conjunction with the previously reported band offsets at alpha-Ga2O3/(AlxGa1-x)(2)O-3 heterojunctions (0.1 <= x <= 0.8). (C) 2018 The Japan Society of Applied Physics
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
    Kamimura, Takafumi
    Sasaki, Kohei
    Wong, Man Hoi
    Krishnamurthy, Daivasigamani
    Kuramata, Akito
    Masui, Takekazu
    Yamakoshi, Shigenobu
    Higashiwaki, Masataka
    APPLIED PHYSICS LETTERS, 2014, 104 (19)
  • [2] Band alignment of Al2O3 with (-201) β-Ga2O3
    Carey, Patrick H.
    Ren, F.
    Hays, David C.
    Gila, B. P.
    Pearton, S. J.
    Jang, Soohwan
    Kuramata, Akito
    VACUUM, 2017, 142 : 52 - 57
  • [3] Characterization of pseudomorphic γ-Ga2O3 and γ-Al2O3 films on MgAl2O4 substrates and the band-alignment at the coherent γ-Ga2O3/Al2O3 heterojunction interface
    Oshima, Takayoshi
    Kato, Yuji
    Magome, Eisuke
    Kobayashi, Eiichi
    Takahashi, Kazutoshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (06)
  • [4] Band Alignment at the Al2O3/β-Ga2O3 Interface with CHF3 Treatment
    刘浩
    刘文军
    肖懿凡
    刘超超
    吴小晗
    丁士进
    Chinese Physics Letters, 2020, (07) : 118 - 121
  • [5] Band alignment and electrical properties of NiO/?-Ga2O3 heterojunctions with different ?-Ga2O3 orientations
    Deng, Yuxin
    Yang, Ziqi
    Xu, Tongling
    Jiang, Huaxing
    Ng, Kar Wei
    Liao, Chao
    Su, Danni
    Pei, Yanli
    Chen, Zimin
    Wang, Gang
    Lu, Xing
    APPLIED SURFACE SCIENCE, 2023, 622
  • [6] Impacts of oxygen source on band alignment of ALD Al2O3/(α-, ε-) Ga2O3 interface
    Zuo, Yan
    Feng, Qian
    Zhang, Tao
    Luo, HaiFeng
    Tian, Xusheng
    Cai, Yuncong
    Gao, Yangyang
    Zhang, Jincheng
    Zhang, Chunfu
    Zhou, Hong
    Hao, Yue
    JOURNAL OF CRYSTAL GROWTH, 2022, 580
  • [7] Band offsets at the interfaces between β-Ga2O3 and Al2O3
    Lyu, Sai
    PHYSICAL REVIEW MATERIALS, 2023, 7 (01)
  • [8] Band offset and electrical properties of ErZO/ β-Ga2O3 and GZO/ β-Ga2O3 heterojunctions
    Shi, Ying-Li
    Huang, Dong
    Ling, Francis Chi-Chung
    APPLIED SURFACE SCIENCE, 2022, 576
  • [9] Tight-binding band structure of β- and α-phase Ga2O3 and Al2O3
    Zhang, Y.
    Liu, M.
    Jena, D.
    Khalsa, G.
    JOURNAL OF APPLIED PHYSICS, 2022, 131 (17)
  • [10] Fabrication of coherent γ-Al2O3/Ga2O3 superlattices on MgAl2O4 substrates
    Kato, Yuji
    Imura, Masataka
    Nakayama, Yoshiko
    Takeguchi, Masaki
    Oshima, Takayoshi
    APPLIED PHYSICS EXPRESS, 2019, 12 (06)
12345