GaN Metal-Semiconductor-Metal Photodetectors Prepared on Nanorod Template

被引：7
|
作者：
Chang, S. J. [1 ,2 ]
Wang, S. M. [1 ,2 ]
Chang, P. C. [3 ]
Kuo, C. H. [4 ]
Young, S. J. [5 ]
Chen, T. P. [1 ,2 ]
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Ctr Micro Nano Sci & Technol, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan
[3] Kun Shan Univ, Dept Elect Engn, Tainan 71003, Taiwan
[4] Natl Cent Univ, Dept Opt & Photon, Tao Yuan 32001, Taiwan
[5] Natl Formosa Univ, Dept Elect Engn, Huwei 632, Yunlin, Taiwan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2010年 / 22卷 / 09期
关键词：
Nanorod template; photodetector (PD); ultraviolet (UV); SCHOTTKY-BARRIER PHOTODETECTORS; INGAN-GAN;
D O I：
10.1109/LPT.2010.2043354
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors report the fabrication of GaN-based metal-semiconductor-metal photodetectors (PDs) on a conventional flat sapphire substrate and on a nanorod template. Compared with the PD prepared on the flat sapphire substrate, it was found that leakage current of the PD prepared on the nanorod template was significantly smaller due to the improved crystal quality. It was also found that we can reduce the photoconductive gain and enhance ultraviolet-to-visible rejection ratio by using the nanorod template.
引用
收藏
页码：625 / 627
页数：3
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