Enhanced electroluminescent cooling in GaN-based light-emitting diodes

被引：0

作者：

Piprek, Joachim ^{[1
]}

Li, Zhan-Ming ^{[2
]}

机构：

[1] NUSOD Inst LLC, Newark, DE 19714 USA

[2] Crosslight Software Inc, 230-3410 Lougheed Hwy, Vancouver, BC V5M 2A4, Canada

来源：

SMART PHOTONIC AND OPTOELECTRONIC INTEGRATED CIRCUITS XIX | 2017年 / 10107卷

关键词：

light-emitting diode; InGaN/GaN LED; electroluminescent cooling; electroluminescent refrigeration; Peltier cooling;

D O I：

10.1117/12.2256232

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optimized GaN-based light-emitting diodes (LEDs) were recently demonstrated to emit photons of higher energy than provided by the injected electrons up to elevated currents beyond the peak of the power conversion efficiency. Correspondingly, the electrical efficiency is above unity, which is attributed to heat extraction from the crystal lattice. In good agreement with measurements, we investigate the origin of such electroluminescent cooling by advanced numerical simulation including all relevant heat transfer mechanisms. For the first time, our simulations reveal the magnitude and the local profile of the heat extraction from the lattice. The built-in nitride polarization field is found to enhance the cooling effect significantly.

引用

页数：7

共 21 条

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Auf der Maur M., 2015, APPL PHYS LETT, V105

[2]

Bandelow U., 2005, OPTOELECTRONICS DEVI

[3] Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling [J].