Effect of La substitution on electrical properties of highly oriented Bi4Ti3O12 films prepared by metalorganic chemical vapor deposition

被引：23
作者：
Sakai, T
Watanabe, T
Funakubo, H
Saito, K
Osada, M
机构：
[1] Tokyo Inst Technol, Dept Innovat & Engn Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[2] Philips Japan Ltd, Analyt Dept, Applicat Lab, Sagamihara, Kanagawa 2280803, Japan
[3] JST, PRESTO, Yokohama, Kanagawa 2268503, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 01期
关键词：
MOCVD; Bi4Ti3O12; substitution; ferroelectricity; bismuth layer structured ferroelectrics; epitaxial thin film;
D O I：
10.1143/JJAP.42.166
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of La substitution on the electrical properties of Bi4Ti3O12 was investigated by using epitaxially grown Bi4Ti3O12 (BIT) films and highly oriented (B3.25La0.75)Ti3O12 [BLT] films with (001)-, (118)- and (104)(014)-orientations. By characterizing the leakage current density for films with different orientations, it was found that the leakage current density along the a-b plane was decreased by La substitution. The spontaneous polarization (P-s) of the BLT film evaluated from the P-E hysteresis properties of the (001)- and (118)-oriented films was 3.5 and 38 muC/cm(2) along the c-axis and the a-axis, respectively. They were smaller than those of the BIT films: 4.0 and 50 muC/cm(2). Based on the fact that La preferentially substitutes for the Bi site in the pseudoperovskite layer, the large remanent polarization widely reported for polycrystalline (Bi3.25La0.75)Ti3O12 films is related to the reduction of the number of defect complexes in the pseudoperovskite layer that possibly pin the domain motion.
引用
收藏
页码：166 / 169
页数：4
相关论文
共 25 条
[11]   ELECTRODE CONTACTS ON FERROELECTRIC PB(ZRXTI1-X)O-3 AND SRBI2TA2O9 THIN-FILMS AND THEIR INFLUENCE ON FATIGUE PROPERTIES [J].
LEE, JJ ;
THIO, CL ;
DESU, SB .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (08) :5073-5078
[12]   Property improvement of 75 nm-thick directly-crystallized SrBi2Ta2O9 thin films by pulse-introduced metalorganic chemical vapor deposition at low temperature [J].
Mitsuya, M ;
Nukaga, N ;
Watanabe, T ;
Funakubo, H ;
Saito, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (7B) :L758-L760
[13]   Large remanent polarization of vanadium-doped Bi4Ti3O12 [J].
Noguchi, Y ;
Miyayama, M .
APPLIED PHYSICS LETTERS, 2001, 78 (13) :1903-1905
[14]   Defect control for large remanent polarization in bismuth titanate ferroelectrics doping effect of higher-valent cations [J].
Noguchi, YJ ;
Miwa, I ;
Goshima, Y ;
Miyayama, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (12B) :L1259-L1262
[15]   Cation distribution and structural instability in Bi4-xLaxTi3O12 [J].
Osada, M ;
Tada, M ;
Kakihana, M ;
Watanabe, T ;
Funakubo, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (9B) :5572-5575
[16]   Lanthanum-substituted bismuth titanate for use in non-volatile memories [J].
Park, BH ;
Kang, BS ;
Bu, SD ;
Noh, TW ;
Lee, J ;
Jo, W .
NATURE, 1999, 401 (6754) :682-684
[17]   Differences in nature of defects between SrBi2Ta2O9 and Bi4Ti3O12 [J].
Park, BH ;
Hyun, SJ ;
Bu, SD ;
Noh, TW ;
Lee, J ;
Kim, HD ;
Kim, TH ;
Jo, W .
APPLIED PHYSICS LETTERS, 1999, 74 (13) :1907-1909
[18]   FERROELECTRIC MEMORIES [J].
SCOTT, JF ;
DEARAUJO, CAP .
SCIENCE, 1989, 246 (4936) :1400-1405
[19]   ELECTRICAL-PROPERTIES OF GRAIN-ORIENTED FERROELECTRIC CERAMICS IN SOME LANTHANUM MODIFIED LAYER-STRUCTURE OXIDES [J].
TAKENAKA, T ;
SAKATA, K .
FERROELECTRICS, 1981, 38 (1-4) :769-772
[20]   Role of lower valent substituent-oxygen vacancy complexes in polarization pinning in potassium-modified lead zirconate titanate [J].
Tan, Q ;
Li, JX ;
Viehland, D .
APPLIED PHYSICS LETTERS, 1999, 75 (03) :418-420
123